BCX17 datasheet(1/1 Pages) ZETEX

Part #	BCX17

Description	PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS –

BCX17

– T1

BCX17R

– T4

COMPLIMENTARY TYPES -

BCX19

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Emitter Voltage

VCES

-50

V

Collector-Emitter Voltage (IC =-10mA)

VCEO

-45

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-500

mA

Peak Collector Current

ICM

-1000

mA

Peak Emitter Current

IEM

-1000

mA

Base Current

IB

-100

mA

Peak Base Current

IBM

-200

mA

Power Dissipation at Tamb=25°C

Ptot

330

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base Cut-Off

Current

ICBO

-100

-200

nA

µA

IE =0, VCB =-20V

IE =0, VCB =-20V, Tj=150°C

Emitter-Base Cut-Off

Current

IEBO

-10

µA

IC =0, VEB =-1V

Base-Emitter Voltage

VBE

-1.2

V

IC =-500mA, VCE =-1V*

Collector-Emitter

Saturation Voltage

VCE(sat)

-620

mV

IC =-500mA, IB =-50mA*

Static Forward Current

Transfer Ratio

hFE

100

70

40

600

IC =-100mA, VCE =-1V

IC =-300mA, VCE =-1V*

IC =-500mA, VCE =-1V*

Transition Frequency

fT

100

MHz

IC =-10mA, VCE =-5V

f =35MHz

Output Capacitance

Cobo

8.0

pF

VCB =-10V, f =1MHz

*Measured under pulsed conditions.

Spice parameter data is available upon request for this device

BCX17

C

B

E

SOT23

TBA

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