BCX68 datasheet(1/1 Pages) ZETEX

Part #	BCX68

Description	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 2 – FEBRUARY 1995

7

FEATURES

*

High gain and low saturation voltages

COMPLEMENTARY TYPE –

BCX69

PARTMARKING DETAIL –

BCX68

– CE

BCX68-16 – CC

BCX68-25 – CD

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

25

V

Collector-Emitter Voltage

VCEO

20

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

2A

Continuous Collector Current

IC

1A

Power Dissipation at Tamb=25°C

Ptot

1W

Operating and Storage Temperature Range

Tj:Tstg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT

CONDITIONS.

Collector-Base

Breakdown voltage

V(BR)CBO

25

V

IC =100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

20

V

IC =10mA

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE =100µA

Collector Cut-Off

Current

ICBO

0.1

10

µA

VCB =25V

VCB =25V, Ta =150°C

Emitter Cut-Off Current

IEBO

10

µA

VEB =5V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.5

V

IC =1A, IB =100mA*

Base-Emitter Turn-On

Voltage

VBE(on)

1.0

V

IC =1A, VCE =1V*

Static Forward Current

Transfer Ratio

hFE

BCX68-16

BCX68-25

50

85

60

100

160

250

375

250

400

IC =5mA, VCE =10V

IC =500mA, VCE =1V

IC =1A, VCE =1V*

IC =500mA, VCE =1V*

IC =500mA, VCE =1V

Transition Frequency

fT

100

MHz

IC =100mA, VCE =5V,

f=100MHz

Output Capacitance

Cobo

25

pF

VCB =10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤2%

For typical characteristics graphs see FMMT449 datasheet.

BCX68

C

B

E

SOT89

3 - 36

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