BSP19 datasheet(1/1 Pages) ZETEX

Part #	BSP19

Description	NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 FEBRUARY 1996

FEATURES

*High VCEO 350V

* Low saturation voltage

COMPLEMENTARY TYPE

BSP16

PARTMARKING DETAIL

BSP19

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

400

V

Collector-Emitter Voltage

VCEO

350

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

1A

Continuous Collector Current

IC

0.5

A

Power Dissipation at Tamb=25°C

Ptot

2W

Operating and Storage Temperature

Range

Tj:Tstg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO

400

V

IC=100µA

Collector-Emitter

Breakdown Voltage

V(BR)CEO

350

V

IC=10mA*

Emitter-Base

Breakdown Voltage

V(BR)EBO

5V

IE=100µA

Collector Cut-Off

Current

ICBO

20

nA

VCB=300V

Emitter Cut-Off Current IEBO

0.1

µ

A

VEB=3V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.5

V

IC=50mA, IB=4mA*

Base-Emitter

Saturation Voltage

VBE(sat)

1.3

V

IC=50mA, IB=4mA*

Static Forward Current

Transfer Ratio

hFE

40

50

IC=20mA, VCE=5V*

IC=100mA, VCE=5V*

Transition Frequency

fT

70

MHz

IC=10mA, VCE=10V

f = 20MHz

Output Capacitance

Cobo

10

pF

VCB=20V, f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

For typical characteristics graphs see FZT658 datasheet.

BSP19

C

E

B

3 - 60

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