SOT89 NPN SILICON PLANAR

DARLINGTON TRANSISTOR

ISSUE 3 – JANUARY 1996

FEATURES

*

Fast Switching

*

High h

FE

PARTMAKING DETAIL — AS3

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

90

V

Collector-Emitter Voltage

80

V

Emitter-Base Voltage

10

V

Pea Pulse Current

1.5

A

Continuous Collector Current

500

mA

Base Current

100

mA

1W

Operating and Storage Temperature Range

-65 to +150

°C

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

90

V

Collector-Emitter

Breakdown Voltage

80

V

Emitter-Base

Breakdown Voltage

10

V

Emitter Cut-Off Current

10

µA

Collector-Emitter

Cut-Off Current

10

µA

Collector-Emitter

Saturation Voltage

1.3

1.3

V

V

Base-Emitter

Saturation Voltage

1.9

V

Static Forward Current

Transfer Ratio

1K

2K

Turn On Time

400 Typical

ns

Turn Off Time

1.5K Typical

ns

* Measured under pulsed conditions. Pulse width=300

µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

For typical characteristics graphs see FMMT614 datasheet.

BST52

C

C

B

E

SOT89

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