2N7002PW_1

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 01 — 22 April 2010

2 of 16

NXP Semiconductors

2N7002PW

60 V, 0.3 A N-channel Trench MOSFET

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 2.

Pinning

Pin

Symbol

Description

Simplified outline

Graphic symbol

1

G

gate

2S

source

3

D

drain

12

3

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

2N7002PW

SC-70

plastic surface-mounted package; 3 leads

SOT323

Table 4.

Marking codes

Type number

Marking code[1]

2N7002PW

X8*

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

25

°C ≤ T

60

V

gate-source voltage

-

±20

V

drain current

300

mA

180

mA

peak drain current

-1.2

A