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FCX617 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # FCX617
Description  NPN SILICON POWER (SWITCHING) TRANSISTOR
PDF  3 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

FCX617 Datasheet(HTML) 2 Page - Zetex Semiconductors

  FCX617 Datasheet HTML 1Page - Zetex Semiconductors FCX617 Datasheet HTML 2Page - Zetex Semiconductors FCX617 Datasheet HTML 3Page - Zetex Semiconductors  
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
15
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
15
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5V
IE=100µA
Collector Cut-Off
Current
ICBO
0.3
100
nA
VCB=10V
Emitter Cut-Off
Current
IEBO
0.3
100
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
0.3
100
nA
VCES=10V
Collector-Emitter
Saturation Voltage
VCE(sat)
8
70
150
14
100
230
300
400
mV
mV
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=50mA*
IC=4A, IB=50mA*
IC=5A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.89
1.0
V
IC=3A, IB=50mA*
Base-Emitter Turn-On
Voltage
VBE(on)
0.82
1.0
V
IC=3A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
200
300
200
150
415
450
320
240
80
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
Transition
Frequency
fT
80
120
MHz
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
30
40
pF
VCB=10V, f=1MHz
Turn-On Time
t(on)
120
ns
VCC=10V, IC=3A
IB1=IB2=50mA
Turn-Off Time
t(off)
160
ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
FCX617



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