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FMMT591A Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # FMMT591A
Description  PNP SILICON PLANAR MEDIUM POWER TRANSISTOR
PDF  2 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

FMMT591A Datasheet(HTML) 2 Page - Zetex Semiconductors

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SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
Low equivalent on resistance RCE(sat) = 350mΩ at 1A
PART MARKING DETAIL -
91A
COMPLEMENTARY TYPE -
FMMT491A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C).
PARAMETER
SYMBOL MIN.
MAX. UNITCONDITIONS.
Collector-Base Breakdown Voltage
V(BR)CBO -40
V
IC=-100µA
Collector-Emitter Breakdown Voltage
V(BR)CEO -40
V
IC=-10mA*
Emitter-Base Breakdown Voltage
V(BR)EBO -5
V
IE=-100µA
Collector Cut-Off Current
ICBO
-100
nA VCB=-30V
Emitter Cut-Off Current
IEBO
-100
nA VEB=-4V
Collector-Emitter Cut-Off Current
ICES
-100
nA VCES=-30V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.2
-0.35
-0.5
V
V
V
IC=-100mA,IB=-1mA*
IC=-500mA,IB=-20mA*
IC=-1A, IB=-100mA*
Base-Emitter Saturation Voltage
VBE(sat)
-1.1
V
IC=-1A, IB=-50mA*
Base-Emitter Turn-on Voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V*
Static Forward Current Transfer Ratio hFE
300
300
250
160
30
800
IC=-1mA,
IC=-100mA*,
IC=-500mA*, VCE=-5V
IC=-1A*,
IC=-2A*,
Transition Frequency
fT
150
MHz IC=-50mA, VCE=-10V
f=100MHz
Output Capacitance
Cobo
10
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FMMT591A
C
B
E
3 - 139
FMMT591A
10A
1A
10mA
100mA
1mA
-55 °C
+25 °C
+100 °C
I+/I*=10
VCE(sat) v I+
IC-Collector Current
IC-Collector Current
VBE(sat) v I+
0
0.2
100mA
10mA
0.4
0.6
0.8
1.0
10A
1A
hFE V IC
IC-Collector Current
1mA
100mA
10mA
10A
1A
100
0
300
200
400
10mA
1mA
IC-Collector Current
VBE(on) v IC
100mA
1A
10A
0.6
0.8
1.0
1.2
0.4
0.2
0
IC-Collector Current
VCE(sat) v IC
1mA
0
0.1
100mA
10mA
+25 ° C
0.2
0.3
0.4
0.5
I+/I*=10
10A
1A
+100 °C
-55 °C
+25 °C
+100 °C
-55 °C
+25 °C
-55 °C
+25 °C
+100 °C
I+/I*=10
V+-=5V
V+-=5V
10
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
0.1V
10V
100V
1s
DC
100ms
10ms
100us
1ms
1V
0
1mA
0.01
I+/I*=50
0.6
0.1
0.2
0.3
0.4
0.5
0.6
TYPICAL CHARACTERISTICS
3 - 140



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