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FZT751 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # FZT751
Description  PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR
PDF  2 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

FZT751 Datasheet(HTML) 2 Page - Zetex Semiconductors

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SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 – FEBRUARY 1995
FEATURES
* 60 Volt VCEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE –
FZT651
PARTMARKING DETAIL –
FZT751
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-3
A
Power Dissipation at Tamb=25°C
Ptot
2W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -80
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -60
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5
V
IE=100µA
Collector Cut-Off Current ICBO
-0.1
-10
µ
A
µ
A
VCB=-60V
VCB=-60V,Tamb=100°C
Emitter Cut-Off Current
IEBO
-0.1
µ
A
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.15
-0.45
0.3
0.6
V
V
IC=-1A, IB=-100mA*
IC=-3A, IB=-300mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
-1.25
V
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-0.8
-1.0
V
IC=-1A, VCE=-2V*
Static Forward Current
Transfer Ratio
hFE
70
100
80
40
200
200
170
150
300
IC=-50mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
Transition Frequency
fT
100
140
MHz
IC=-100mA, VCE=-5V
f=100MHz
Switching Times
ton
40
ns
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
450
ns
Output Capacitance
Cobo
30
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
FZT751
FZT751
C
C
E
B
3 234
3 - 235
TYPICAL CHARACTERISTICS
VCE(sat) v IC
IC -
Collector Current (Amps)
0.01
0.1
10
1
10
0
0.1
0.2
0.4
0.5
0.3
0.6
0.001
0.0001
IC/IB=10
IC -
Collector Current (Amps)
hFE v IC
0.01
0.1
1
VCE=2V
125
175
225
75
0
IC -
Collector Current (Amps)
VBE(sat) v IC
0.6
0.8
1.0
1.2
1.4
0.01
10
0.1
1
0.0001 0.001
IC/IB=10
IC -
Collector Current (Amps)
VBE(on) v IC
0.6
0.8
1.0
1.2
0.4
0.01
10
0.1
1
0.0001 0.001
VCE=2V
Switching Speeds
IC -
Collector Current (Amps)
0.1
1
IB1=IB2=IC/10
ts
tf
td
tr
ts
ns
0
td
tr
tf
ns
100
120
40
20
60
80
140
0
500
600
200
100
300
400
700
Single Pulse Test at Tamb=25°C
0.1
100
1s
100ms
10
DC
0.01
VCE - Collector Emitter Voltage (V)
Safe Operating Area
10ms
1ms
100µs
110
0.1
1



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