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ZMR Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZMR Datasheet(HTML) 2 Page - Zetex Semiconductors |
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2 / 10 page ![]() ABSOLUTE MAXIMUM RATINGS Input voltage (ZMR25H) 22.5V ZMR250 20V (ZMR50H) 25V ZMR500 20V Package power dissipation SOT23 500mW (Note 3) (Tamb=25 °C) TO92 600mW Output current (IO) 100mA Operating temperature -55 to 125°C Storage temperature -65 to 150°C Note: 1. The maximum operating input voltage and output current of the device will be governed by the maximum power dissipation of the selected package. Maximum package power dissipation is specified at 25 °C and must be linearly derated to zero at Tamb =125°C. 2. The following data represents pulse test conditions with junction temperatures as indicated at the initiation of the test. Continuous operation of the devices with the stated conditions might exceed the power dissipation limits of the chosen package. 3. Maximum power dissipation for the SOT23 package, is calculated assuming that the device is mounted on a ceramic substrate measuring 15 x 15 x 0.6mm. ZMR25H ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated):Tj=25°C, IO=10mA, Vin=6.5V SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNITS V O Output Voltage 2.438 2.5 2.563 V IO=0 to 50mA Tj=-55 to 125°C 2.360 2.640 V Vin=4.5 to 22.5V IO=0 to 50mA Tj=-55 to 125°C 2.360 2.640 V ∆V O Line Regulation V in=4.5 to 22.5V 5 15 mV ∆V O Load Regulation IO=0 to 50mA IO=0 to 10mA 20 12 30 mV mV l s Supply Current Tj=-55 to 125°C30 40 µA ∆l s Supply Current Change IO=0 to 50mA Vin=4.5 to 22.5V 1 2 ±10 10 µA µA V n Output Noise Voltage f=10Hz to 10KHz 65 µV rms ∆V in /∆VO Ripple Rejection Vin=6.3 to 18V f=120Hz 55 75 dB V in Input Voltage Required To Maintain Regulation 4.2 3.9 V ∆V O /∆T Average Temperature Coefficient of VO IO=5.0mA Tj=-55 to 125°C 0.275 0.700 mV/°C ZMR SERIES 4-105 |
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