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HAL201 Datasheet(PDF) 2 Page - Micronas |
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HAL201 Datasheet(HTML) 2 Page - Micronas |
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2 / 2 page ![]() PRODUCT INFORMATION HAL 2xy April/2009 All information and data contained in this product information are without any commitment, are not to be consid- ered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Product or development sample availability and delivery are exclusively subject to our respective order confirmation form. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Micronas GmbH ⋅ Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg (Germany) ⋅ P.O. Box 840 ⋅ D-79008 Freiburg (Germany) Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: docservice@micronas.com ⋅ www.micronas.com No part of this publication may be reproduced, photo- copied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Edition April 6, 2009; Order No. PI000010_002EN Available Types and Behavior Type Switching Behavior Sensitivity Power-on and Undervoltage Reset HAL 201 unipolar low – HAL 202 latching high – HAL 203 latching medium – HAL 204 latching low – HAL 206 unipolar high – HAL 207 unipolar low – HAL 208 unipolar medium – HAL 210 unipolar high – HAL 220 latching high • HAL 221 unipolar low • System Architecture The Hall-effect sensor is a monolithic inte- grated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias is used to compensate the decreasing induction of magnets at higher temperatures. If the mag- netic field exceeds the threshold levels, the open-drain output switches to the appropri- ate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. HAL 2xy Temperature Dependent Bias Switch Hysteresis Control Comparator Output VDD 1 OUT 3 Clock Hall Plate GND 2 Short Circuit & Overvoltage Protection Reverse Voltage & Overvoltage Protection Fig. 1: Block diagram of the HAL 2xy |
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