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AM1806 Datasheet(PDF) 61 Page - Texas Instruments

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Part # AM1806
Description  AM1806 ARM Microprocessor
PDF  241 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

AM1806 Datasheet(HTML) 61 Page - Texas Instruments

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AM1806
www.ti.com
SPRS658B – FEBRUARY 2010 – REVISED MAY 2010
5.2
Recommended Operating Conditions
NAME
DESCRIPTION
CONDITION
MIN
NOM
MAX
UNIT
CVDD
Core Logic Supply Voltage (variable)
1.3V operating point
1.25
1.3
1.35
V
1.2V operating point
1.14
1.2 or 1.26
1.32
V
1.1V operating point
1.05
1.1
1.16
V
1.0V operating point
0.95
1.0
1.05
V
RVDD
Internal RAM Supply Voltage
1.14
1.2 or 1.26
1.32
V
RTC_CVDD (1)
RTC Core Logic Supply Voltage
0.9
1.2 or 1.26
1.32
V
PLL0_VDDA
PLL0 Supply Voltage
1.14
1.2 or 1.26
1.32
V
PLL1_VDDA
PLL1 Supply Voltage
1.14
1.2 or 1.26
1.32
V
USB_CVDD
USB0 Core Logic Supply Voltage
1.14
1.2 or 1.26
1.32
V
USB0_VDDA18
USB0 PHY Supply Voltage
1.71
1.8
1.89
V
USB0_VDDA33
USB0 PHY Supply Voltage
3.15
3.3
3.45
V
Supply
Voltage
DDR_DVDD18
DDR2 PHY Supply Voltage
1.71
1.8
1.89
V
0.5*
0.49*
0.51*
DDR_VREF
DDR2/mDDR reference voltage
DDR_DVDD1
V
DDR_DVDD18
DDR_DVDD18
8
DDR2/mDDR impedance control,
DDR_ZP
Vss
V
connected via 50
Ω resistor to Vss
1.8V operating point
1.71
1.8
1.89
V
Power Group A Dual-voltage IO
DVDD3318_A
Supply Voltage
3.3V operating point
3.15
3.3
3.45
V
1.8V operating point
1.71
1.8
1.89
V
Power Group B Dual-voltage IO
DVDD3318_B
Supply Voltage
3.3V operating point
3.15
3.3
3.45
V
1.8V operating point
1.71
1.8
1.89
V
Power Group C Dual-voltage IO
DVDD3318_C
Supply Voltage
3.3V operating point
3.15
3.3
3.45
V
Supply
VSS
Core Logic Digital Ground
V
Ground
PLL0_VSSA
PLL0 Ground
V
PLL1_VSSA
PLL1 Ground
V
OSCVSS(2)
Oscillator Ground
0
0
0
V
RTC_VSS(2)
RTC Oscillator Ground
V
USB0_VSSA
USB0 PHY Ground
V
USB0_VSSA33
USB0 PHY Ground
V
Voltage
VIH
High-level input voltage, Dual-voltage I/O, 3.3V(3)
2
V
Input High
High-level input voltage, Dual-voltage I/O, 1.8V (3)
0.65*DVDD
V
High-level input voltage, RTC_XI
0.8*RTC_CVDD
V
High-level input voltage, OSCIN
0.8*CVDD
V
VIL
Low-level input voltage, Dual-voltage I/O, 3.3V(3)
0.8
V
Voltage
Input Low
Low-level input voltage, Dual-voltage I/O, 1.8V (3)
0.35*DVDD
V
Low-level input voltage, RTC_XI
0.2*RTC_CVDD
V
Low-level input voltage, OSCIN
0.2*CVDD
V
USB
USB0_VBUS
USB external charge pump input
0
5.25
V
Transition
Transition time, 10%-90%, All Inputs (unless otherwise
tt
0.25P (4)
ns
Time
specified in the electrical data sections)
(1)
The RTC provides an option for isolating the RTC_CVDD from the CVDD to reduce current leakage when the RTC is powered
independently. If these power supplies are not isolated (CTRL.SPLITPOWER=0), RTC_CVDD must be equal to or greater than CVDD.
If these power supplies are isolated (CTRL.SPLITPOWER=1), RTC_CVDD may be lower than CVDD.
(2)
When an external crystal is used oscillator (OSC_VSS, RTC_VSS) ground must be kept separate from other grounds and connected
directly to the crystal load capacitor ground. These pins are shorted to VSS on the device itself and should not be connected to VSS on
the circuit board. If a crystal is not used and the clock input is driven directly, then the oscillator VSS may be connected to board ground.
(3)
These IO specifications apply to the dual-voltage IOs only and do not apply to the DDR2/mDDR . DDR2/mDDR IOs are 1.8V IOs and
adhere to the JESD79-2A standard.
(4)
Where P = the period of the applied signal. Maintaining transition times as fast as possible is recommended to improve noise immunity
on input signals.
Copyright © 2010, Texas Instruments Incorporated
Device Operating Conditions
61
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