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ZDM4306N Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # ZDM4306N
Description  DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS
PDF  3 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZDM4306N Datasheet(HTML) 2 Page - Zetex Semiconductors

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ZDM4306N
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
V
ID=1mA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
1.3
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
100
nA
VGS=± 20V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
10
100
µA
µA
VDS=60V, VGS=0
VDS=48V, VGS=0V, T=125°C(2)
On-State Drain
Current(1)
ID(on)
12
A
VDS=10V, VGS=10V
Static Drain-Source
On-State Resistance (1)
RDS(on)
0.22
0.32
0.33
0.45
Ω
Ω
VGS=10V,ID=3A
VGS=5V, ID=1.5A
Forward
Transconductance (1)(2)
gfs
700
mS
VDS=25V,ID=3A
Input Capacitance (2)
Ciss
350
pF
Common Source Output
Capacitance (2)
Coss
140
pF
VDS=25 V, VGS=0V, f=1MHz
Reverse Transfer
Capacitance (2)
Crss
30
pF
Turn-On Delay Time
(2)(3)
td(on)
8ns
VDD≈25V, VGEN=10V, ID=3A
Rise Time (2)(3)
tr
25
ns
Turn-Off Delay Time
(2)(3)
td(off)
30
ns
Fall Time (2)(3)
tf
16
ns
1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse generator
TYPICAL CHARACTERISTICS
Saturation Characteristics
VDS - Drain Source Voltage (Volts)
0
1
234
5
6
7
8
9
10
Normalised RDS(on) and VGS(th) v Temperature
Tj-Junction Temperature (°C)
-50 -25
0
25 50 75 100
150
125
175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drai
n-
So
urc
e R
esi
sta
nc
e R
DS
(o
n)
Gate Threshold Voltage VGS(TH)
ID=3A
VGS=10V
ID=1mA
VGS=VDS
2.6
225
0
4
1
2
7
6
5
3
10
9
8
10V
8V
9V
7V
5V
4V
6V
3.5V
VGS=
20V 12V
On-resistance v drain current
ID-Drain Current (Amps)
0.1
10
100
3.5V
5V
VGS=3V
6V
0.1
10
1.0
1
10V
3V
12
11
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
Coss
Ciss
Crss
0
1020
30
40
5060
70
80
0
300
200
100
400
500
Q-Charge (nC)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
VDD=
20V
ID=3A
40V
60V
12
3
4
5
6
78
9
10 11 12
Transconductance v drain current
ID(on)- Drain Current (Amps)
02
4
68
10
VDS=10V
0
1
2
4
3
5
12
14
16
18
20
8V
ZDM4306N
3 - 322
3 - 323



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