2003 Jul 02

2

NXP Semiconductors

Product data sheet

High-voltage switching diode array

BAS21VD

FEATURES

• Small plastic SMD package

• Switching speed: max. 50 ns

• Continuous reverse voltage: max. 200 V

• Repetitive peak reverse voltage: max. 250 V

• Repetitive peak forward current: max. 1 A.

APPLICATIONS

• High-voltage switching in surface mounted circuits

• Automotive

• Communication.

DESCRIPTION

The BAS21VD is a high-voltage diode array fabricated in

planar technology and encapsulated in a small SOT457

plastic SMD package.

PINNING

PIN

DESCRIPTION

1

cathode (k1)

2

cathode (k2)

3

cathode (k3)

4

anode (a3)

5

anode (a2)

6

anode (a1)

handbook, halfpage

MAM473

4

5

6

3

2

1

13

2

4

5

6

Fig.1 Simplified outline (SOT457) and symbol.

Marking code: B5.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

repetitive peak reverse voltage

−

250

V

continuous reverse voltage

−

200

V

continuous forward current

note 1; see Fig.2

−

200

mA

repetitive peak forward current

t = 1 ms;

δ = 25%

−

1

A

surge; see Fig.4

t = 10

µs

−

16

A

t = 100

µs

−

8

A

t = 10 ms

−

2

A

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C