BAW62 datasheet(3/9 Pages) NXP

3 / 9 page

1996 Sep 17

NXP Semiconductors

Product data sheet

High-speed diode

BAW62

ELECTRICAL CHARACTERISTICS

Tj = 25 °C; unless otherwise specified.

THERMAL CHARACTERISTICS

Note

Device mounted on a printed circuit-board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

forward voltage

see Fig.3

IF = 5 mA

620

750

IF = 100 mA

−

1000

IF = 100 mA; Tj = 100 °C

−

930

reverse current

see Fig.5

VR = 20 V

−

VR = 50 V

−

200

VR = 75 V

−

μA

VR = 20 V; Tj = 150 °C

−

μA

VR = 75 V; Tj = 150 °C

−

100

μA

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

trr

reverse recovery time

when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured

at IR = 1 mA; see Fig.7

−

Vfr

forward recovery voltage

when switched from IF = 50 mA;

tr = 20 ns; see Fig.8

−

2.5

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

500

K/W

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