BC549C datasheet(3/7 Pages) NXP

3 / 7 page

2004 Oct 11

NXP Semiconductors

Product data sheet

NPN general purpose transistors

BC549; BC550

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Notes

1. VBEsat decreases by about 1.7 mV/K with increasing temperature.

2. VBE decreases by about 2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 30 V; IE = 0 A

−

VCB = 30 V; IE = 0 A; Tj = 150 °C

−

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0 A

−

100

hFE

DC current gain

VCE = 5 V; see Fig.2

IC = 10 μA

−

270

−

IC = 2 mA

420

520

800

VCEsat

collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

−

250

IC = 100 mA; IB = 5 mA

−

200

600

VBEsat

base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA; note 1

−

700

−

IC = 100 mA; IB = 5 mA; note 1

−

900

−

VBE

base-emitter voltage

VCE = 5 V; IC = 2 mA; note 2

580

660

700

VCE = 5 V; IC = 10 mA; note 2

−

770

collector capacitance

VCB = 10 V; IE = ie = 0 A;

f = 1 MHz

−

1.5

−

emitter capacitance

VEB = 0.5 V; IC = ic = 0 A;

f = 1 MHz

−

transition frequency

VCE = 5 V; IC = 10 mA;

f = 100 MHz

100

−

MHz

noise figure

VCE = 5 V; IC = 200 μA;

RS = 2 kΩ; f = 10 Hz to 15.7 kHz

−

VCE = 5 V; IC = 200 μA;

RS = 2 kΩ; f = 1 kHz; B = 200 Hz

−

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