BC559C datasheet(3/7 Pages) NXP

3 / 7 page

2004 Nov 05

NXP Semiconductors

Product data sheet

PNP general purpose transistor

BC559

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Notes

VBEsat decreases by about −1.7 mV/K with increasing temperature.

VBE decreases by about −2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −30 V; IE = 0 A

−

−1

−15

VCB = −30 V; IE = 0 A; Tj = 150 °C

−

−4

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0 A

−

−100

hFE

DC current gain; BC559C

VCE = −5 V; IC = −2 mA; see Fig.2

420

−

800

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −0.5 mA

−

−60

−300

IC = −100 mA; IB = −5 mA

−

−180

−650

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA; note 1

−

−750

−

IC = −100 mA; IB = −5 mA; note 1

−

−930

−

VBE

base-emitter voltage

VCE = −5 V; IC = −2 mA; note 2

−600 −650

−750

VCE = −5 V; IC = −10 mA; note 2

−

−820

collector capacitance

VCB = −10 V; IE = ie = 0 A; f = 1 MHz

−

transition frequency

VCB = −5 V; IE = −10 mA; f = 100 MHz 100

−

MHz

noise figure; BC559C

VCE = −5 V; IC = −200 μA; RS = 2 kΩ;

f = 30 Hz to 15.7 kHz

−

VCE = −5 V; IC = −200 μA; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

−

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