BC337 datasheet(5/19 Pages) NXP

5 / 19 page

BC817_BC817W_BC337_6

Product data sheet

Rev. 06 — 17 November 2009

5 of 19

NXP Semiconductors

BC817; BC817W; BC337

45 V, 500 mA NPN general-purpose transistors

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

[2]

VBE decreases by approximately 2 mV/K with increasing temperature.

Table 8.

Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

IE = 0 A; VCB = 20 V

100

IE = 0 A; VCB = 20 V;

Tj =150 °C

--5

μA

IEBO

emitter-base cut-off current

IC = 0 A; VEB = 5 V

100

hFE

DC current gain

IC = 100 mA; VCE = 1 V

[1]

BC817; BC817W; BC337

100

600

BC817-16; BC817-16W;

BC337-16

100

250

BC817-25; BC817-25W;

BC337-25

160

400

BC817-40; BC817-40W;

BC337-40

250

600

hFE

DC current gain

IC = 500 mA; VCE = 1 V

[1] 40

VCEsat

collector-emitter saturation

voltage

IC = 500 mA; IB = 50 mA

[1] --700

VBE

base-emitter voltage

IC = 500 mA; VCE = 1 V

[2] --1.2

collector capacitance

IE = ie = 0 A; VCB = 10 V;

f=1MHz

-3

transition frequency

IC = 10 mA; VCE = 5 V;

f=100MHz

100

MHz

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