BC856B datasheet(4/10 Pages) NXP

4 / 10 page

2004 Jan 16

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BC856; BC857; BC858

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −30 V; IE = 0

−

−1

−15

VCB = −30 V; IE = 0;

Tj = 150 °C

−

−4

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−100

hFE

DC current gain

IC = −2 mA; VCE = −5 V

BC856

125

−

475

BC857

125

−

800

BC856A; BC857A

125

−

250

BC856B; BC857B; BC858B

220

−

475

BC857C

420

−

800

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA −

−75

−300

IC = −100 mA; IB = −5 mA;

note 1

−

−250

−650

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA −

−700

−

IC = −100 mA; IB = −5 mA;

note 1

−

−850

−

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V

−600

−650

−750

IC = −10 mA; VCE = −5 V

−

−820

collector capacitance

VCB = −10 V; IE = Ie = 0;

f = 1 MHz

−

4.5

−

transition frequency

VCE = −5 V; IC = −10 mA;

f = 100 MHz

100

−

MHz

noise figure

IC = −200 μA; VCE = −5 V;

RS = 2 kΩ; f = 1 kHz;

B = 200 Hz

−

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