BC868 datasheet(6/9 Pages) NXP

6 / 9 page

2004 Nov 08

NXP Semiconductors

Product data sheet

NPN medium power transistor;

20 V, 1 A

BC868

handbook, halfpage

(1)

(5)

(7)

(A)

VCE (V)

2.4

1.6

0.8

MLE331

(8)

(10)

(6)

(4)

(3)

(2)

(9)

Fig.5

Collector current as a function of

collector-emitter voltage; typical values.

(1) IB = 10 mA.

(2) IB = 9 mA.

(3) IB = 8 mA.

(4) IB = 7 mA.

(5) IB = 6 mA.

(6) IB = 5 mA.

(7) IB = 4 mA.

(8) IB = 3 mA.

(9) IB = 2 mA.

(10) IB = 1 mA.

handbook, halfpage

10−1

MLE332

10−4

10−3

10−2

10−1

IC (A)

VBE

(V)

Fig.6

Base-emitter voltage as function of collector

current; typical values.

VCE = 1 V.

handbook, halfpage

102

103

MLE333

10−4

10−3

10−2

10−1

IC (A)

hFE

Fig.7

DC current gain as a function of collector

current; typical values.

VCE = 1 V.

handbook, halfpage

MLE334

10−1

10−2

10−3

10−4

IC (A)

VCEsat

(V)

10−1

10−2

10−3

110

Fig.8

Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB = 10.

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