BCP52_BCX52_8

© NXP B.V. 2008. All rights reserved.

Product data sheet

Rev. 08 — 25 February 2008

3 of 12

NXP Semiconductors

BCP52; BCX52

60 V, 1 A PNP medium power transistors

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

[3]

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

−60

V

collector-emitter voltage

open base

-

−60

V

emitter-base voltage

open collector

-

−5V

collector current

-

−1A

peak collector current

single pulse;

-

−1.5

A

peak base current

single pulse;

-

−0.2

A

total power dissipation

BCP52

[1] -

0.65

W

[2] -1

W

BCX52

[1] -

0.5

W

[2] -

0.9

W

[3] -

1.3

W

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C