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BCV46 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BCV46 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 7 page ![]() 2004 Jan 13 2 NXP Semiconductors Product data sheet PNP Darlington transistors BCV26; BCV46 FEATURES • High current (max. 500 mA) • Low voltage (max. 60 V) • Very high DC current gain (min. 10000). APPLICATIONS • Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complements: BCV27 and BCV47. MARKING Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. PINNING TYPE NUMBER MARKING CODE(1) BCV26 FD* BCV46 FE* PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 1 3 2 MAM299 13 2 TR2 TR1 Top view ORDERING INFORMATION TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BCV26 − plastic surface mounted package; 3 leads SOT23 BCV46 |
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