BCV48 datasheet(4/8 Pages) NXP

4 / 8 page

2004 Dec 06

NXP Semiconductors

Product data sheet

PNP Darlington transistors

BCV28; BCV48

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

BCV28

IE = 0 A; VCB = −30 V

−

−100 nA

BCV48

IE = 0 A; VCB = −60 V

−

−100 nA

IEBO

emitter-base cut-off current

IC = 0 A; VBE = −10 V

−

−100 nA

hFE

DC current gain

IC = −1 mA; VCE = −5 V; see Fig.2

BCV28

4000

−

BCV48

2000

−

DC current gain

IC = −10 mA; VCE = −5 V; see Fig.2

BCV28

10000

−

BCV48

4000

−

DC current gain

IC = −100 mA; VCE = −5 V; see Fig.2

BCV28

20000

−

BCV48

10000

−

DC current gain

IC = −500 mA; VCE = −5 V; see Fig.2

BCV28

4000

−

BCV48

2000

−

VCEsat

collector-emitter saturation

voltage

IC = −100 mA; IB = −0.1 mA

−

−1

VBEsat

base-emitter saturation voltage

IC = −100 mA; IB = −0.1 mA

−

−1.5

VBEon

base-emitter on-state voltage

IC = −10 mA; IB = −5 mA

−

−1.4

transition frequency

IC = −30 mA; VCE = −5 V;

f = 100 MHz

−

220

−

MHz

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