BCX71H datasheet(4/7 Pages) NXP

4 / 7 page

2004 Feb 16

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BCX71 series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0; VCB = −45 V

−

−20

IE = 0; VCB = −45 V; Tamb = 150 °C

−

−20

μA

IEBO

emitter-base cut-off current

IC = 0; VEB = −4 V

−

−20

hFE

DC current gain

IC = −10 μA; VCE = −5 V

BCX71H

−

BCX71J

−

BCX71K

100

−

DC current gain

IC = −2 mA; VCE = −5 V

BCX71H

180

−

310

BCX71J

250

−

460

BCX71K

380

−

630

DC current gain

IC = −50 mA; VCE = −1 V; note 1

BCX71H

−

BCX71J

100

−

BCX71K

110

−

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −0.25 mA

−60

−

−250

IC = −50 mA; IB = −1.25 mA; note 1

−120

−

−550

VBEsat

base-emitter saturation

voltage

IC = −10 mA; IB = −0.25 mA

−600

−

−850

IC = −50 mA; IB = −1.25 mA; note 1

−680

−

−1050 mV

VBE

base-emitter voltage

IC = −2 mA; VCE = −5 V

−600

−650

−750

IC = −10 μA; VCE = −5 V

−

−550

−

IC = −50 mA; VCE = −1 V; note 1

−

−720

−

collector capacitance

IE = Ie = 0; VCB = −10 V; f = 1 MHz

−

4.5

−

emitter capacitance

IC = Ic = 0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IC = −10 mA; VCE = −5 V; f = 100 MHz 100

−

MHz

noise figure

IC = −200 μA; VCE = −5 V; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz

−

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