BF821 datasheet(3/6 Pages) NXP

3 / 6 page

2004 Jan 16

NXP Semiconductors

Product data sheet

PNP high-voltage transistors

BF821; BF823

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

BF821

−

−300

BF823

−

−250

VCEO

collector-emitter voltage

open base

BF821

−

−300

BF823

−

−250

VEBO

emitter-base voltage

open collector

−

−5

collector current (DC)

−

−50

ICM

peak collector current

−

−100

IBM

peak base current

−

−50

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

250

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0; VCB = −200 V

−

−10

IE = 0; VCB = −200 V; Tj = 150 °C

−

−10

µA

IEBO

emitter-base cut-off current

IC = 0; VEB = −5 V

−

−50

hFE

DC current gain

IC = −25 mA; VCE = −20 V

−

VCEsat

collector-emitter saturation voltage

IC = −30 mA; IB = −5 mA

−

−800

Cre

feedback capacitance

IC = Ic = 0; VCB = −30 V; f = 1 MHz −

1.6

transition frequency

IC = −10 mA; VCE = −10 V;

f = 100 MHz

−

MHz

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