BFG92ASLASHX datasheet(2/13 Pages) NXP

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NXP Semiconductors

Product speciﬁcation

NPN 5 GHz wideband transistor

BFG92A/X

FEATURES

• High power gain

• Low noise figure

• Gold metallization ensures

excellent reliability.

APPLICATIONS

Wideband applications in the UHF

and microwave range.

DESCRIPTION

Silicon NPN transistor in a 4-pin,

dual-emitter SOT143B plastic

package.

PINNING

DESCRIPTION

collector

emitter

base

emitter

Fig.1 SOT143B.

Marking code:

%MW.

handbook, 2 columns

Top view

MSB014

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCBO

collector-base voltage

−−

VCEO

collector-emitter voltage

−−

collector current (DC)

−−

Ptot

total power dissipation

Ts ≤ 60 °C

−−

400

Cre

feedback capacitance

IC =ic = 0; VCB = 10 V; f = 1 MHz

−

0.35

−

transition frequency

IC = 15 mA; VCE = 10 V; f = 500 MHz

3.5

−

GHz

GUM

maximum unilateral power

gain

IC = 15 mA; VCE =10V; Tamb =25 °C;

f = 1 GHz

−

IC = 15 mA; VCE =10V; Tamb =25 °C;

f = 2 GHz

−

noise ﬁgure

s = Γopt; IC = 5 mA; VCE =10V;

Tamb =25 °C; f = 1 GHz

−

Rev. 06 - 12 March 2008

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