BFS19 datasheet(4/7 Pages) NXP

4 / 7 page

2004 Jan 05

NXP Semiconductors

Product data sheet

NPN medium frequency transistor

BFS19

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 20 V

−

100

IE = 0; VCB = 20 V; Tj = 100 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

−

100

hFE

DC current gain

IC = 1 mA; VCE = 10 V

−

225

VBE

base-emitter voltage

IC = 1 mA; VCE = 10 V

650

−

740

collector capacitance

IE = 0; VCB = 10 V; f = 1 MHz

−

Cre

feedback capacitance

IC = 0 mA; VCB = 10 V; f = 1 MHz

−

0.85

−

transition frequency

IC = 1 mA; VCE = 10 V; f = 100 MHz

−

260

−

MHz

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