BFS20 datasheet(3/6 Pages) NXP

3 / 6 page

2004 Feb 05

NXP Semiconductors

Product data sheet

NPN medium frequency transistor

BFS20

THERMAL CHARACTERISTICS

Note

Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth(j-a)

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0; VCB = 20 V

−

100

IE = 0; VCB = 20 V; Tj = 100 °C

−

µA

IEBO

emitter-base cut-off current

IC = 0; VEB = 4 V

−

100

hFE

DC current gain

IC = 7 mA; VCE = 10 V

−

VBE

base-emitter voltage

IC = 7 mA; VCE = 10 V

−

740

900

collector capacitance

IE = Ie = 0; VCB = 10 V; f = 1 MHz

−

Cre

feedback capacitance

IC = 0; VCB = 10 V; f = 1 MHz

−

350

−

transition frequency

IC = 5 mA; VCE = 10 V; f = 100 MHz

275

450

−

MHz

BFS20 Datasheet(PDF) 3 Page - NXP Semiconductors

BFS20 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6

Datasheet Download

Link URL