BLF177 datasheet(4/19 Pages) NXP

4 / 19 page

NXP Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF177

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

ID = 100 mA; VGS = 0

125

−−

IDSS

drain-source leakage current

VGS = 0; VDS =50V

−−

2.5

IGSS

gate-source leakage current

VGS = ±20 V; VDS =0

−−

µA

VGSth

gate-source threshold voltage

ID = 50 mA; VDS =10V

−

4.5

∆VGS

gate-source voltage difference of

matched pairs

ID = 50 mA; VDS =10V

−−

100

gfs

forward transconductance

ID = 5 A; VDS = 10 V

4.5

6.2

−

RDSon

drain-source on-state resistance

ID = 5 A; VGS =10V

−

0.2

0.3

Ω

IDSX

on-state drain current

VGS = 10 V; VDS =10V

−

Cis

input capacitance

VGS = 0; VDS =50V; f=1MHz

−

480

−

Cos

output capacitance

VGS = 0; VDS =50V; f=1MHz

−

190

−

Crs

feedback capacitance

VGS = 0; VDS =50V; f=1MHz

−

VGS group indication

GROUP

LIMITS

(V)

GROUP

LIMITS

(V)

MIN.

MAX.

MIN.

MAX.

2.0

2.1

3.3

3.4

2.1

2.2

3.4

3.5

2.2

2.3

3.5

3.6

2.3

2.4

3.6

3.7

2.4

2.5

3.7

3.8

2.5

2.6

3.8

3.9

2.6

2.7

3.9

4.0

2.7

2.8

4.0

4.1

2.8

2.9

4.1

4.2

2.9

3.0

4.2

4.3

3.0

3.1

4.3

4.4

3.1

3.2

4.4

4.5

3.2

3.3

Rev. 06 - 24 January 2007

4 of 19

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