2004 Dec 09

3

NXP Semiconductors

Product data sheet

PNP Darlington transistors

BST60; BST61; BST62

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

THERMAL CHARACTERISTICS

Note

1.

For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BST60

−

−60

V

BST61

−

−80

V

BST62

−

−90

V

collector-emitter voltage

BST60

−

−45

V

BST61

−

−60

V

BST62

−

−80

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

−

−1

A

peak collector current

−

−2

A

base current (DC)

−

−100

mA

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

96

K/W

thermal resistance from junction to soldering point

16

K/W