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PD85035STR-E Datasheet(PDF) 1 Page - STMicroelectronics |
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PD85035STR-E Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 15 page  August 2008 Rev 2 1/15 15 PD85035-E PD85035S-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC1 European directive Description The PD85035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) Figure 1. Pin connection PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Gate Source Drain www.st.com Table 1. Device summary Order codes Package Packing PD85035-E PowerSO-10RF (formed lead) Tube PD85035S-E PowerSO-10RF (straight lead) Tube PD85035TR-E PowerSO-10RF (formed lead) Tape and reel PD85035STR-E PowerSO-10RF (straight lead) Tape and reel |
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