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ACST4 Datasheet(PDF) 3 Page - STMicroelectronics |
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ACST4 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() ASCT4 Characteristics Doc ID 8766 Rev 5 3/13 Table 4. Static characteristics Symbol Test conditions Value Unit VTM (1) 1. For both polarities of OUT pin referenced to COM pin IOUT = 5.6 A, tp = 500 µs Tj = 25 °C MAX. 1.7 V VT0 (1) Threshold voltage Tj = 125 °C MAX. 0.9 V Rd (1) Dynamic resistance Tj = 125 °C MAX. 110 m Ω IDRM IRRM VOUT = VDRM/ VRRM Tj = 25 °C MAX. 20 µA Tj = 125 °C MAX. 500 µA Table 5. Thermal resistances Symbol Parameter Value Unit Rth(j-a) Junction to ambient TO-220FPAB 60 °C/W Junction to ambient (soldered on 0.5 cm2 copper pad) DPAK 70 Rth(j-c) Junction to case for full cycle sine wave conduction TO-220FPAB 4.6 °C/W DPAK 2.6 Figure 2. Maximum power dissipation versus on-state rms current Figure 3. On-state rms current versus case temperature (full cycle) 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 180° α = 180° P(W) IT(RMS)(A) IT(RMS)(A) 0 1 2 3 4 5 0 25 50 75 100 125 α=180° TO220FPAB DPAK TC (°C) |
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