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ZTX751 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part # ZTX751
Description  PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
PDF  3 Pages
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Manufacturer  ZETEX [Zetex Semiconductors]
Direct Link  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZTX751 Datasheet(HTML) 2 Page - Zetex Semiconductors

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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 60 Volt VCEO
* 2 Amp continuous current
* Low saturation voltage
*Ptot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT
Collector-Base Voltage
VCBO
-60
-80
V
Collector-Emitter Voltage
VCEO
-45
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-6
A
Continuous Collector Current
IC
-2
A
Power Dissipation: at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V(BR)CBO -60
-80
V
IC=-100µA
Collector-Emitter
Breakdown
Voltage
V(BR)CEO -45
-60
V
IC=-10mA
Emitter-Base
Breakdown
Voltage
V(BR)EBO -5
-5
V
IE=-100µA
Collector Cut-Off
Current
ICBO
-0.1
-10
-0.1
-10
µ
A
µ
A
µ
A
µ
A
VCB=-45V
VCB=-60V
VCB=-45V,Tamb=100°C
VCB=-60V,Tamb=100°C
Emitter Cut-Off
Current
IEBO
-0.1
-0.1
µ
A
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.15
-0.28
-0.3
-0.5
-0.15
-0.28
-0.3
-0.5
V
V
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
-1.25
-0.9
-1.25 V
IC=-1A, IB=-100mA
ZTX750
ZTX751
3-257
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX750
ZTX751
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
fT
100
140
100
140
MHz IC=-100mA, VCE=-5V
f=100MHz
Switching Times
ton
40
40
ns
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
toff
450
450
ns
Output
Capacitance
Cobo
30
30
pF
VCB=10V f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX750
ZTX751
-40
0.0001
Derating curve
T -Temperature (°C)
Maximum transient thermal impedance
Pulse Width (seconds)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t1
tP
D=t1/tP
1.0
0.5
2.0
1.5
Case
temperature
2.5
Ambient
temperat
ure
0
D=1 (D.C.)
3-258



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