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PDTC143EE Datasheet(PDF) 4 Page - NXP Semiconductors

Part # PDTC143EE
Description  NPN resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓
PDF  14 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PDTC143EE Datasheet(HTML) 4 Page - NXP Semiconductors

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2004 Aug 05
4
NXP Semiconductors
Product data sheet
NPN resistor-equipped transistors;
R1 = 4.7 k
Ω, R2 = 4.7 kΩ
PDTC143E series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
Refer to standard mounting conditions.
2.
Reflow soldering is the only recommended soldering method.
3.
Refer to SOT883 standard mounting conditions; FR4 with 60
μm copper strip line.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PDTC143EE
−
plastic surface mounted package; 3 leads
SOT416
PDTC143EEF
−
plastic surface mounted package; 3 leads
SOT490
PDTC143EK
−
plastic surface mounted package; 3 leads
SOT346
PDTC143EM
−
leadless ultra small plastic package; 3 solder lands; body
1.0
× 0.6 × 0.5 mm
SOT883
PDTC143ES
−
plastic single-ended leaded (through hole) package; 3 leads
SOT54
PDTC143ET
−
plastic surface mounted package; 3 leads
SOT23
PDTC143EU
−
plastic surface mounted package; 3 leads
SOT323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
VI
input voltage
positive
−
+30
V
negative
−
−10
V
IO
output current (DC)
−
100
mA
ICM
peak collector current
−
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
SOT54
note 1
−
500
mW
SOT23
note 1
−
250
mW
SOT346
note 1
−
250
mW
SOT323
note 1
−
200
mW
SOT416
note 1
−
150
mW
SOT883
notes 2 and 3
−
250
mW
SOT490
notes 1 and 2
−
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C



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