2004 Apr 15

2

NXP Semiconductors

Product data sheet

NPN/PNP resistor-equipped transistors;

R1 = 2.2 k

Ω, R2 = 47 kΩ

PEMD10; PUMD10

FEATURES

• Built-in bias resistors

• Simplifies circuit design

• Reduces component count

• Reduces pick and place costs.

APPLICATIONS

• Low current peripheral driver

• Replacement of general purpose transistors in digital

applications

• Control of IC inputs.

DESCRIPTION

NPN/PNP resistor-equipped transistors (see “Simplified

outline, symbol and pinning” for package details).

QUICK REFERENCE DATA

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

collector-emitter

voltage

−

50

V

output current (DC)

−

100

mA

TR1

NPN

−

−

−

TR2

PNP

−

−

−

R1

bias resistor

2.2

−

k

Ω

R2

bias resistor

47

−

k

Ω

PRODUCT OVERVIEW

Note

1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

TYPE NUMBER

PACKAGE

MARKING CODE

PNP/PNP

COMPLEMENT

NPN/NPN

COMPLEMENT

PHILIPS

EIAJ

PEMD10

SOT666

−

D1

PEMB10

PEMH10

PUMD10

SOT363

SC-88

D*0(1)

PUMB10

PUMH10

TYPE NUMBER

SIMPLIFIED OUTLINE AND SYMBOL

PINNING

PIN

DESCRIPTION

PEMD10; PUMD10

1

emitter TR1

2

base TR1

3

collector TR2

4

emitter TR2

5

base TR2

6

collector TR1

handbook, halfpage

MAM448

12

3

4

6

5

Top view

65

4

12

3

R2

TR1

TR2

R1

R1

R2