2001 Nov 07

2

NXP Semiconductors

Product data sheet

PNP general purpose double transistor

PEMT1

FEATURES

• 300 mW total power dissipation

• Very small 1.6 × 1.2 mm ultra thin package

• Self alignment during soldering due to straight leads

• Replaces two SC-75/SC-89 packaged transistors on

same PCB area

• Reduced required PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor pair in a SOT666 plastic package.

NPN complement: PEMX1.

MARKING

PINNING

TYPE NUMBER

MARKING CODE

PEMT1

FF

PIN

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

MAM450

13

2

TR1

TR2

6

4

5

12

3

4

6

5

Top view

Fig.1 Simplified outline (SOT666) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor

collector-base voltage

open emitter

−

−50

V

collector-emitter voltage

open base

−

−40

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

−

−100

mA

peak collector current

−

−200

mA

peak base current

−

−200

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

Per device

total power dissipation

−

300

mW