PIMH9 datasheet(4/9 Pages) NXP

4 / 9 page

2004 Apr 14

NXP Semiconductors

Product data sheet

NPN/NPN resistor-equipped transistors;

R1 = 10 k

Ω, R2 = 47 kΩ

PIMH9; PUMH9; PEMH9

THERMAL CHARACTERISTICS

Notes

Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.

Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Per transistor

Rth(j-a)

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

625

K/W

SOT457

note 1

417

K/W

SOT666

notes 1 and 2

625

K/W

Per device

Rth(j-a)

thermal resistance from junction to ambient

Tamb ≤ 25 °C

SOT363

note 1

416

K/W

SOT457

note 1

208

K/W

SOT666

notes 1 and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 50 V; IE = 0 A

−

100

ICEO

collector-emitter cut-off current

VCE = 30 V; IB = 0 A

−

μA

VCE = 30 V; IB = 0 A; Tj = 150 °C

−

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0 A

−

150

μA

hFE

DC current gain

VCE = 5 V; IC = 5 mA

100

−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−

100

Vi(off)

input-off voltage

VCE = 5 V; IC = 100 μA

−

0.7

0.5

Vi(on)

input-on voltage

VCE = 0.3 V; IC = 1 mA

1.4

0.8

−

input resistor

resistor ratio

3.7

4.7

5.7

collector capacitance

VCB = 10 V; IE = ie = 0 A;

f = 1 MHz

−

2.5

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