PIMZ2 datasheet(4/9 Pages) NXP

4 / 9 page

PIMZ2_PUMZ2_6

Product data sheet

Rev. 06 — 17 November 2009

4 of 9

NXP Semiconductors

PIMZ2; PUMZ2

NPN/PNP general-purpose double transistors

Characteristics

Table 8.

Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor with negative polarity; unless otherwise specified

ICBO

collector-base cut-off current VCB =60V; IE =0 A

100

VCB =60V; IE =0 A; Tj = 150 °C-

μA

IEBO

emitter-base cut-off current

VEB =7V; IC =0 A

100

hFE

DC current gain

VCE =6V; IC = 1 mA

120

250

560

TR1 (PNP)

VCEsat

collector-emitter saturation

voltage

IC = −50 mA; IB = −5mA

−500

transition frequency

IE = −2mA; VCE = −12 V; f = 100 MHz

190

MHz

collector capacitance

IE =ie =0 A; VCB = −12 V; f = 1 MHz

2.3

TR2 (NPN)

VCEsat

collector-emitter saturation

voltage

IC =50mA; IB =5mA

250

transition frequency

IE =2 mA; VCE = 12 V; f = 100 MHz

100

MHz

collector capacitance

IE =ie =0 A; VCB =12V; f=1MHz

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