PMD2001D datasheet(6/15 Pages) NXP

6 / 15 page

PMD2001D_2

Product data sheet

Rev. 02 — 28 August 2009

6 of 15

NXP Semiconductors

PMD2001D

MOSFET driver

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per NPN transistor

ICBO

collector-base cut-off

current

VCB =40V; IE = 0 A

--10

VCB =40V; IE =0A;

Tj = 150 °C

--10

µA

hFE

DC current gain

VCE =5V; IC = 1 mA

100

210

VCE =5V; IC = 200 mA

100

170

300

VCE =5V; IC = 500 mA

[1] 50

100

VCEsat

collector-emitter

saturation voltage

IC = 200 mA; IB = 20 mA

150

250

IC = 500 mA; IB =50mA

[1] -

300

500

VBEsat

base-emitter

saturation voltage

IC = 200 mA; IB = 20 mA

0.86

IC = 500 mA; IB =50mA

[1] -

0.95

1.1

Per PNP transistor

ICBO

collector-base cut-off

current

VCB = −40 V; IE =0A

−10

VCB = −40 V; IE =0A;

Tj = 150 °C

−10

µA

hFE

DC current gain

VCE = −5 V; IC = −1 mA

100

180

VCE = −5 V; IC = −200 mA

125

300

VCE = −5 V; IC = −500 mA

[1] 50

VCEsat

collector-emitter

saturation voltage

IC = −200 mA; IB = −20 mA

−130

−250

IC = −500 mA; IB = −50 mA

[1] -

−280

−500

VBEsat

base-emitter

saturation voltage

IC = −200 mA; IB = −20 mA

−0.87 −1V

IC = −500 mA; IB = −50 mA

[1] -

−0.98 −1.1

Per device

delay time

IC = 0.15 A; VI = 7.5 V

rise time

ton

turn-on time

storage time

fall time

toff

turn-off time

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