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PMD9010D Datasheet(PDF) 7 Page - NXP Semiconductors |
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PMD9010D Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 16 page  PMD9010D_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 November 2006 7 of 16 NXP Semiconductors PMD9010D MOSFET driver 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 7. Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Transistor 1 (TR1) ICBO collector-base cut-off current VCB =30V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =30V; IB =0A; Tj = 150 °C --50 µA IEBO emitter-base cut-off current VEB =5V; IC = 0 A - - 0.1 mA hFE DC current gain VCE =5V; IC = 1 mA 200 290 450 VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 60 200 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 0.7 - V VBE base-emitter voltage VCE =5V; IC = 2 mA - 660 - mV Transistor 2 (TR2) ICBO collector-base cut-off current VCB =30V; IE = 0 A --15 nA VCB =30V; IE =0A; Tj = 150 °C --5 µA VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 60 200 mV IC = 100 mA; IB = 5 mA - 200 400 mV IC = 200 mA; IB = 20 mA - 340 500 mV VBEsat base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - 0.7 - V IC = 100 mA; IB = 5 mA - 0.9 - V VBE base-emitter voltage VCE =5V; IC = 2 mA 610 660 710 mV VCE =5V; IC = 10 mA - - 770 mV Diode (D1) VF forward voltage IF = −200 mA [1] -- −1.1 V TR2 and D1 hFE DC current gain VCE =5V; IC = 1 mA 200 290 450 VCE =5V; IC = 100 mA 95 140 - VCE =5V; IC = 200 mA 24 35 - Device td delay time IC = 0.05 A; IB = 2.5 mA - 13 - ns tr rise time - 77 - ns ton turn-on time - 90 - ns ts storage time - 853 - ns tf fall time - 205 - ns toff turn-off time - 1058 - ns |
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