PMEM4010PD datasheet(5/10 Pages) NXP

5 / 10 page

2002 Oct 28

NXP Semiconductors

Product data sheet

PNP transistor/Schottky diode module

PMEM4010PD

handbook, halfpage

1200

200

400

600

800

1000

MHC088

−10−1

hFE

−10

−1

IC (mA)

−102

−103

−104

(1)

(2)

(3)

Fig.2

DC current gain as a function of collector

current; typical values.

PNP transistor; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−10

−1

−10−1

MHC089

−10−1

−1

−10

VBE

(V)

IC (mA)

−103

−102

−104

(1)

(2)

(3)

Fig.3

Base-emitter voltage as a function of

collector current; typical values.

PNP transistor; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−103

−102

−10

−1

MHC090

−1

−10

VCEsat

(mV)

IC (mA)

−102

−103

−104

(1)

(2)

(3)

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

PNP transistor; IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

10−1

102

MHC091

−10−1

−1

−10

RCEsat

(

Ω)

IC (mA)

−103

−102

−104

(1)

(2)

(3)

Fig.5

Equivalent on-resistance as a function of

collector current; typical values.

PNP transistor; IC/IB = 10.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

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