PMSS3906 datasheet(4/8 Pages) NXP

4 / 8 page

2004 Jan 09

NXP Semiconductors

Product data sheet

PNP switching transistor

PMSS3906

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector-base cut-off current

IE = 0; VCB = −30 V

−

−50

IE = 0; VCB = −30 V; Tj = 150 °C

−

−10

µA

IEBO

emitter-base cut-off current

IC = 0; VEB = −5 V

−

−50

hFE

DC current gain

VCE = −1 V

IC = −0.1 mA

−

IC = −1 mA

−

IC = −10 mA

100

300

IC = −50 mA; note 1

−

IC = −100 mA; note 1

−

VCEsat

collector-emitter saturation

voltage

IC = −10 mA; IB = −1 mA

−

−250

IC = −50 mA; IB = −5 mA; note 1

−

−400

VBEsat

base-emitter saturation voltage

IC = −10 mA; IB = −1 mA

−

−850

IC = −50 mA; IB = −5 mA; note 1

−

−950

collector capacitance

IE = ie = 0; VCB = −5 V; f = 1 MHz

−

4.5

emitter capacitance

IC = ic = 0; VEB = −0.5 V; f = 1 MHz

−

transition frequency

IE = −10 mA; VCB = −20 V; f = 100 MHz

150

−

MHz

noise figure

IC = −100 µA; VCE = −5 V; RS = 1 kΩ;

f = 10 Hz to 15.7 kHz

−

Switching times (between 10% and 90% levels); see Fig.1

ton

turn-on time

ICon = −10 mA; IBon = −1 mA; IBoff = 1 mA −

100

delay time

−

rise time

−

toff

turn-off time

−

700

storage time

−

600

fall time

−

100

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