TLP548J

2009-10-20

2

Characteristic

Symbol

Rating

Unit

Forward current

50

mA

Forward current derating (Ta ≥ 53°C)

−0.7

mA / °C

Peak forward current (100 μs pulse, 100 pps)

1

A

Reverse voltage

5

V

600

V

600

V

On

−state current

150

mA

On

−state current derating (Ta ≥ 25°C)

−2.0

mA / °C

Peak on

−state current (100 μs pulse, 120 pps)

3

A

Peak one cycle surge current

2

A

Peak reverse gate voltage

5

V

Operating temperature range

−40 to 100

°C

Storage temperature range

−55 to 125

°C

Lead soldering temperature (10 s)

260

°C

Isolation voltage (AC, 1 min., R.H. ≤ 60%)

(Note 1)

2500

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Note 1: Device Considered a two terminal device : pins 1,2 and 3 shorted together and pins 4,5 and 6 shorted

together.

Recommended Operating Conditions

Characteristic

Symbol

Min

Typ.

Max

Unit

Supply voltage

―

―

240

Forward current

10

―

25

mA

Operating temperature

−25

―

85

°C

Gate to cathode resistance

―

27

33

kΩ

Gate to cathode capacity

―

0.01

0.1

μF

Note 2: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.