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STM6600 Datasheet(PDF) 40 Page - STMicroelectronics |
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STM6600 Datasheet(HTML) 40 Page - STMicroelectronics |
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40 / 51 page ![]() DC and AC characteristics STM6600 - STM6601 40/51 Doc ID 15453 Rev 7 PB VIL Input low voltage VCC ≥ 2.0 V, enable asserted 0.99 V VIH Input high voltage VCC ≥ 2.0 V, enable asserted 1.05 V tDEBOUNCE Debounce period VCC ≥ 2.0 V20 32 44 ms RPB Internal pull-up resistor VCC = 5.5 V, input asserted 65 100 135 k Ω SR VIL Input low voltage 0.99 V VIH Input high voltage 1.05 V tDEBOUNCE Debounce period 20 32 44 ms RSR (4) Internal pull-up resistor VCC = 5.5 V, input asserted 65 100 135 k Ω PBOUT VOL Output low voltage VCC = 2 V, ISINK = 1 mA, PBOUT asserted 0.3 V PBOUT leakage current VPBOUT = 3 V, PBOUT open drain –0.1 +0.1 µA VCCLO VOL Output low voltage VCC = 2 V, ISINK = 1 mA, VCCLO asserted 0.3 V VCCLO leakage current VVCCLO = 3 V, VCCLO open drain –0.1 +0.1 µA PSHOLD VIL Input low voltage VCC ≥ 2.0 V0.99 V VIH Input high voltage VCC ≥ 2.0 V1.05 V Glitch immunity 1 80 µs PSHOLD leakage current VPSHOLD = 0.6 V –0.1 0.1 µA PSHOLD to enable propagation delay 30 µs RPSHOLD Pull-down resistor connected internally during power-up VPSHOLD = 5.5 V 195 300 405 k Ω Table 5. DC and AC characteristics (continued) Symbol Parameter Test condition(1) Min. Typ.(2) Max. Unit |
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