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RB520S30 Datasheet(PDF) 2 Page - NXP Semiconductors |
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RB520S30 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() RB520S30_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 2 of 12 NXP Semiconductors RB520S30 200 mA low VF MEGA Schottky barrier rectifier 2. Pinning information [1] The marking bar indicates the cathode. 3. Ordering information 4. Marking 5. Limiting values Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 cathode [1] 2 anode 2 1 sym001 12 Table 3. Ordering information Type number Package Name Description Version RB520S30 SC-79 plastic surface-mounted package; 2 leads SOD523 Table 4. Marking codes Type number Marking code RB520S30 ZA Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj =25 °C - 30 V IF(AV) average forward current square wave; δ = 0.5; f=20kHz Tamb ≤ 105 °C [1] - 0.2 A Tsp ≤ 135 °C - 0.2 A IFSM non-repetitive peak forward current tp = 8.3 ms half sine wave; JEDEC method [2] -1 A Ptot total power dissipation Tamb ≤ 25 °C [3][4] - 275 mW [3][1] - 420 mW [3][5] - 500 mW |
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