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TPC6003 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part # TPC6003
Description  Silicon N Channel MOS Type (U-MOSIII)
PDF  7 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6003 Datasheet(HTML) 5 Page - Toshiba Semiconductor

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TPC6003
2007-01-15
5
Ambient temperature Ta (
°C)
RDS (ON) – Ta
Drain-source voltage VDS (V)
IDR – VDS
Drain-source voltage VDS
Capacitance
– VDS
Ambient temperature Ta (
°C)
Vth – Ta
Ambient temperature Ta (
°C)
PD – Ta
Total gate charge Qg (nC)
Dynamic input/output characteristics
0
10
20
30
40
50
Common source
Pulse test
−80
−40
0
40
80
160
120
VGS = 4.5 V
VGS = 10 V
ID = 1.5 A, 3 A
ID = 6 A
ID = 1.5 A, 3 A, 6 A
10
100
1000
10000
0.1
1
10
100
3000
300
30
0.3
3
30
Ciss
Crss
Coss
Common source
VGS = 0 V
f
= 1 MHz
Ta
= 25°C
0
0.5
1.5
2.0
2.5
3.5
−80
−40
0
40
80
160
Common source
VDS = 10 V
ID = 1 mA
Pulse test
120
3.0
1.0
0
08
16
10
30
50
0
5
15
25
20
24
32
40
20
40
10
6 V
12 V
VDD = 24 V
VGS
VDD = 24 V
12 V
6 V
Common source
ID = 6 A
Ta
= 25°C
Pulse test
0
0
0.5
1
1.5
2
2.5
40
80
120
160
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
(1) t
= 5 s
(2) t
= 5 s
(1) DC
(2) DC
0.1
1
10
0
−0.8
−1.2
−1.6
−2.0
−0.4
3
0.3
100
Common source
Ta
= 25°C
Pulse test
30



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