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SSM6L36FE Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # SSM6L36FE
Description  High-Speed Switching Applications
PDF  9 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM6L36FE Datasheet(HTML) 2 Page - Toshiba Semiconductor

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SSM6L36FE
2008-06-05
2
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0V
20
⎯
⎯
Drain-source breakdown voltage
V (BR) DSX
ID = 1 mA, VGS = - 10 V
12
⎯
⎯
V
Drain cutoff current
IDSS
VDS =20 V, VGS = 0V
⎯
⎯
1
μA
Gate leakage current
IGSS
VGS = ±10 V, VDS = 0V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = 3 V, ID = 1 mA
0.35
⎯
1.0
V
Forward transfer admittance
|Yfs|
VDS = 3 V, ID = 200 mA
(Note2)
420
840
⎯
mS
ID = 200 mA, VGS = 5.0 V (Note2)
⎯
0.46
0.63
ID = 200 mA, VGS = 4.5 V (Note2)
⎯
0.51
0.66
ID = 200 mA, VGS = 2.5 V (Note2)
⎯
0.66
0.85
ID = 100 mA, VGS = 1.8 V (Note2)
⎯
0.81
1.14
Drain-source ON-resistance
RDS (ON)
ID = 50 mA, VGS = 1.5 V
(Note2)
⎯
0.95
1.52
Ω
Input capacitance
Ciss
⎯
46
⎯
Output capacitance
Coss
⎯
10.8
⎯
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0V, f = 1 MHz
⎯
7.3
⎯
pF
Total Gate Charge
Qg
⎯
1.23
⎯
Gate
−Source Charge
Qgs
⎯
0.60
⎯
Gate
−Drain Charge
Qgd
VDS = 10V, ID = 0.5 A
VGS = 4.0 V
⎯
0.63
⎯
nC
Turn-on time
ton
⎯
30
⎯
Switching time
Turn-off time
toff
VDD = 10 V, ID = 200 mA
VGS = 0 to 2.5 V, RG = 50 Ω
⎯
75
⎯
ns
Drain-source forward voltage
VDSF
ID = -0.5 A, VGS = 0 V
(Note2)
⎯
-0.88
-1.2
V
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Conditions
Min
Typ.
Max
Unit
V (BR) DSS ID = -1 mA, VGS = 0 V
-20
⎯
⎯
Drain-source breakdown voltage
V (BR) DSX ID = -1 mA, VGS = 8 V
-12
⎯
⎯
V
Drain cutoff current
IDSS
VDS = -16 V, VGS = 0 V
⎯
⎯
-10
μA
Gate leakage current
IGSS
VGS = ±8 V, VDS = 0 V
⎯
⎯
±1
μA
Gate threshold voltage
Vth
VDS = -3 V, ID = -1 mA
-0.3
⎯
-1.0
V
Forward transfer admittance
|Yfs|
VDS = -3 V, ID = -100mA
(Note2)
190
⎯
⎯
mS
ID = -100mA, VGS = -4.5 V
(Note2)
⎯
0.95
1.31
ID = -80mA, VGS = -2.8 V
(Note2)
⎯
1.22
1.60
ID = -40mA, VGS = -1.8 V
(Note2)
⎯
1.80
2.70
Drain-source ON-resistance
RDS (ON)
ID = -30mA, VGS = -1.5 V
(Note2)
⎯
2.23
3.60
Ω
Input capacitance
Ciss
⎯
43
⎯
Output capacitance
Coss
⎯
10.3
⎯
Reverse transfer capacitance
Crss
VDS = -10 V, VGS = 0 V, f = 1 MHz
⎯
6.1
⎯
pF
Total Gate Charge
Qg
⎯
1.2
⎯
Gate
−Source Charge
Qgs
⎯
0.85
⎯
Gate
−Drain Charge
Qgd
VDS = -10 V, IDS= -330mA
VGS = -4 V
⎯
0.35
⎯
nC
Turn-on time
ton
⎯
90
⎯
Switching time
Turn-off time
toff
VDD = -10 V, ID = -100mA
VGS = 0 to -2.5 V, RG = 50Ω
⎯
200
⎯
ns
Drain-source forward voltage
VDSF
ID =330mA, VGS = 0 V
(Note2)
⎯
0.88
1.2
V
Note 2: Pulse test



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