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TPC8115 Datasheet(PDF) 5 Page - Toshiba Semiconductor |
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TPC8115 Datasheet(HTML) 5 Page - Toshiba Semiconductor |
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5 / 7 page ![]() TPC8115 2006-11-15 5 RDS (ON) – Ta IDR – VDS Capacitance – VDS Vth – Ta PD – Ta Dynamic input/output characteristics Ambient temperature Ta (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C) Total gate charge Qg (nC) 80 120 160 200 0 0.8 1.2 1.6 2 0.4 0 40 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s (1) (2) 0 −80 −40 0 40 120 160 80 5 20 25 ID = −2.5 / −5.0 / −10A ID = −2.5 / −5.0 / −10A VGS = −4.5 V −1.8 A Common source Pulse test 15 0 −0.1 −1 −10 −100 0.2 0.4 0.6 0.8 1.0 VGS = 0 V −1 −10 −5 −3 Common source Ta = 25°C Pulse test 100 −0.1 −1 −10 −100 1000 10000 100000 Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss Coss Ciss −1.2 0 −80 −40 0 40 120 160 80 −0.4 −0.8 −1.6 −2 Common source VDS = −10 V ID = −1 mA Pulse test −6 −4 0 −2 0 −10 −20 −30 0 40 80 120 160 VDD = −16 V VDS VGS VDD = −16V −4 −4 −8 −8 Common source ID = −10 A Ta = 25°C Pulse test 10 VGS = −2.5 V VGS = −1.8 V −2.5 A ID = −10 A −5 −3 −1 −25 −15 −5 |
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