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IP2010PBF Datasheet(PDF) 1 Page - International Rectifier

Part # IP2010PBF
Description  High Frequency GaN-Based Integrated Power Stage
PDF  1 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IP2010PBF Datasheet(HTML) 1 Page - International Rectifier

  IP2010PBF Datasheet HTML 1Page - International Rectifier  
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iP2010PbF
www.irf.com
High Frequency GaN-Based Integrated
Power Stage
Typical Application
Features
•
Input voltage range of 7V to 13.2V
•
Output voltage range of 0.6V to 5.5V
•
Output current up to 30A
•
Benchmark peak and full load efficiency –
no heat sink required
•
Operation up to 3MHz
•
Ultrafast, PowIRtuneTM gate driver
•
Wireless, low noise flip-chip design
•
Industry-standard TTL compatible Enable
and PWM inputs
•
Small footprint LGA package (7.7mm x
6.5mm x 1.7mm)
•
Pin compatible with iP2011
Applications
•
Server, Storage and Netcom POL
•
General DC/DC Converters
Description
The iP2010 is a fully optimized, high frequency
power
stage
solution
for
synchronous
buck
applications utilizing IR’s Gallium Nitride (GaN)-
based power device technology platform.
The iP2010 integrates a highly sophisticated, ultra
fast PowIRtune driver IC matched to a multi-switch
monolithic GaN-based power device. These devices
are mounted in a completely wireless package
platform to deliver higher efficiency and more than
double the switching frequency of state-of-the-art
silicon-based integrated power stage devices.
With a switching capability up to 3MHz, the iP2010
enables designers to dramatically reduce the value
and size of output capacitors and inductors where
space is at premium.
The device can also be
configured to operate at a lower switching frequency
for applications that require the highest possible
efficiencies.
PD-97461
GaNpowIRTM


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