4

1

4

1

1

4

FEATURES

• Compact 4-pin package

• Current Transfer Ratio: 600% minimum (at I

• High isolation voltage between input and output (5300

VRMS)

• UL recognized (File # E90700)

DESCRIPTION

The H11B815 consists of a gallium arsenide infrared

emitting diode driving a silicon Darlington phototransistor

in a 4-pin dual in-line package.

1

2

4

3 EMITTER

COLLECTOR

ANODE

CATHODE

4-PIN PHOTODARLINGTON

OPTOCOUPLERS

H11B815

APPLICATIONS

• Power Supply Monitors

• Relay Contact Monitor

• Telephone/Telegraph Line

Receiver

• Twisted Pair Line Receiver

• Digital Logic/Digital Logic

Parameter

Symbol

Value

Units

TOTAL DEVICE

-55 to +150

°C

Storage Temperature

Operating Temperature

-55 to +100

°C

Lead Solder Temperature

260 for 10 sec

°C

250

mW

EMITTER

80

mA

DC/Average Forward Input Current

Reverse Input Voltage

6V

Forward Current - Peak (1µs pulse, 300pps)

1

A

140

mW

Derate above 25°C

1.33

mW/°C

DETECTOR

35

V

Collector-Emitter Voltage

Emitter-Collector Voltage

6V

Continuous Collector Current

200

mA

200

mW

Derate above 25°C

2.0

mW/°C

1/25/00

200029A