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MBR735 Datasheet(PDF) 2 Page - ON Semiconductor

Part # MBR735
Description  SWITCHMODE??Power Rectifiers
PDF  5 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBR735 Datasheet(HTML) 2 Page - ON Semiconductor

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MBR735, MBR745
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR735
MBR745
VRRM
VRWM
VR
35
45
V
Average Rectified Forward Current
(TC = 164°C)
Per Device
IF(AV)
7.5
A
Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 168°C)
IFRM
7.5
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, Junction−to−Case
RqJC
3.0
°C/W
Maximum Thermal Resistance, Junction−to−Ambient
RqJA
60
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 7.5 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 25°C)
vF
−
−
−
0.48
0.61
0.68
0.57
0.72
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
−
−
10
0.03
15
0.1
mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.



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