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MBR735 Datasheet(PDF) 2 Page - ON Semiconductor |
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MBR735 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page ![]() MBR735, MBR745 http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR735 MBR745 VRRM VRWM VR 35 45 V Average Rectified Forward Current (TC = 164°C) Per Device IF(AV) 7.5 A Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 168°C) IFRM 7.5 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 3.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 7.5 Amps, TJ = 125°C) (iF = 15 Amps, TJ = 125°C) (iF = 15 Amps, TJ = 25°C) vF − − − 0.48 0.61 0.68 0.57 0.72 0.84 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR − − 10 0.03 15 0.1 mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. |
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